| PART |
Description |
Maker |
| SUM110N10-09-E3 SUM110N10-09 |
TERMINAL
N-Channel 100-V (D-S) 200C MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| C1812H122JGGACTU |
Ceramic, 200C, 200C-(CxxxxH), 1200 pF, 5%, 2,000 V, 1812, C0G, SMD, MLCC, High Temperature, Ultra-Stable, Low Loss
|
Kemet Corporation
|
| C4540H273KHGWCT050 |
Ceramic, 200C, 200C-(CxxxxH), 0.027 uF, 10%, 1,500 V, 4540, C0G, SMD, MLCC, High Temperature, Pulse Discharge, Ultra-Stable, Low Loss
|
Kemet Corporation
|
| UPA502T PA502T G11238EJ1V0DS00 UPA502T-T1 UPA502T- |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL MOS FET 5-PIN 2 CIRCUITS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT5010LVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm
|
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT6010JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 47A 0.100 Ohm
|
Advanced Power Technology
|
| RJK0701DPN-E0-15 RJK0701DPN-E0-T2 |
N-Channel MOS FET 75 V, 100 A, 3.8 m?
|
Renesas Electronics Corporation
|
| RJK0602DPN-E0 RJK0602DPN-E0-T2 RJK0602DPN-E0-15 |
N-Channel MOS FET 60 V, 100 A, 3.9 m.
N-Channel MOS FET 60 V, 100 A, 3.9 m?
|
Renesas Electronics Corporation
|
| 2SK3212 2SK3212-E |
10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MRF275G MRF275 |
N-CHANNEL MOS BROADBAND 100 . 500 MHz RF POWER FET
|
MACOM[Tyco Electronics]
|
|
